Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction

L. Kronik*, L. Burstein, M. Leibovitch, Yoram Shapira, D. Gal, E. Moons, J. Beier, G. Hodes, David Cahen, D. Hariskos, R. Klenk, H. W. Schock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

58 Scopus citations


Contact potential difference measurements in the dark and under illumination are used to derive the conduction band offset (ΔE c) in a solar cell quality junction formed by chemical bath deposition of CdS on a polycrystalline thin film of Cu(In,Ga)Se2. Our experimental measurements and the estimates made for dipole contributions show that the junction is of type II, i.e., without a spike in the conduction band (ΔEc=80 meV±100 meV). This is consistent with the high performance of the actual solar cell. However, it differs from most previous results on junctions based on single crystals and/or vacuum deposited CdS, which indicated the existence of a conduction band spike.

Original languageEnglish
Pages (from-to)1405
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995


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