Au/InSb(110) interface profiles from synchrotron-radiation and polar-angle-dependent x-ray photoemission

Yoram Shapira*, F. Boscherini, C. Capasso, F. Xu, D. M. Hill, J. H. Weaver

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

High-resolution synchrotron-radiation photoemission and polar-angle-dependent x-ray photoemission have been used to examine the chemistry and atomic profile of the Au/InSb(110) interface. These results show considerable Au-induced disruption and atomic intermixing at low coverage. Mathematical simulations of the experimental polar profiles predict that the atomic densities of both In and Sb decrease exponentially with distance into the Au layer, with concentration gradients for Sb at both the buried interface and the surface due to Sb segregation. Comparisons with other Au-semiconductor interfaces suggest common interface behavior with differences related to substrate bond strengths and semiconductor atom solubilities in Au.

Original languageEnglish
Pages (from-to)7656-7659
Number of pages4
JournalPhysical Review B-Condensed Matter
Volume36
Issue number14
DOIs
StatePublished - 1987
Externally publishedYes

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