Abstract
The authors have used Auger electron spectroscopy (AES) combined with Ar** plus sputtering to profile the chemical composition of UHV-cleaved InP(110) interfaces with Au, Al, Cu, Ni, Ti, and Ag films. The authors observe pronounced anion and cation segregation to the free metal surface which depend sensitively on the metal-InP reactivity. Reactive metal (e. g. , Al, Ti, or Ni) interlayers at Au-InP interfaces decrease anion diffusion and surface segregation monotonically with increasing interlayer thickness and AES depth profiles indicate a P accumulation at or just below the intimate metal-InP interface. These and other sputter-AES studies suggest that the lower (higher) Schottky barriers of reactive (unreactive) metals are associated with cation (anion) depletion within the InP bulk and on anion accumulation at the intimate InP-metal interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 618-622 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1983 |
| Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: 25 Jan 1983 → 27 Jan 1983 |