TY - JOUR
T1 - AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-InP INTERFACES.
AU - Shapira, Y.
AU - Brillson, L. J.
PY - 1983
Y1 - 1983
N2 - The authors have used Auger electron spectroscopy (AES) combined with Ar** plus sputtering to profile the chemical composition of UHV-cleaved InP(110) interfaces with Au, Al, Cu, Ni, Ti, and Ag films. The authors observe pronounced anion and cation segregation to the free metal surface which depend sensitively on the metal-InP reactivity. Reactive metal (e. g. , Al, Ti, or Ni) interlayers at Au-InP interfaces decrease anion diffusion and surface segregation monotonically with increasing interlayer thickness and AES depth profiles indicate a P accumulation at or just below the intimate metal-InP interface. These and other sputter-AES studies suggest that the lower (higher) Schottky barriers of reactive (unreactive) metals are associated with cation (anion) depletion within the InP bulk and on anion accumulation at the intimate InP-metal interfaces.
AB - The authors have used Auger electron spectroscopy (AES) combined with Ar** plus sputtering to profile the chemical composition of UHV-cleaved InP(110) interfaces with Au, Al, Cu, Ni, Ti, and Ag films. The authors observe pronounced anion and cation segregation to the free metal surface which depend sensitively on the metal-InP reactivity. Reactive metal (e. g. , Al, Ti, or Ni) interlayers at Au-InP interfaces decrease anion diffusion and surface segregation monotonically with increasing interlayer thickness and AES depth profiles indicate a P accumulation at or just below the intimate metal-InP interface. These and other sputter-AES studies suggest that the lower (higher) Schottky barriers of reactive (unreactive) metals are associated with cation (anion) depletion within the InP bulk and on anion accumulation at the intimate InP-metal interfaces.
UR - http://www.scopus.com/inward/record.url?scp=0020783519&partnerID=8YFLogxK
U2 - 10.1116/1.582610
DO - 10.1116/1.582610
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AN - SCOPUS:0020783519
SN - 0734-211X
VL - 1
SP - 618
EP - 622
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
IS - 3
T2 - Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th
Y2 - 25 January 1983 through 27 January 1983
ER -