AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-InP INTERFACES.

Y. Shapira, L. J. Brillson

Research output: Contribution to journalConference articlepeer-review

Abstract

The authors have used Auger electron spectroscopy (AES) combined with Ar** plus sputtering to profile the chemical composition of UHV-cleaved InP(110) interfaces with Au, Al, Cu, Ni, Ti, and Ag films. The authors observe pronounced anion and cation segregation to the free metal surface which depend sensitively on the metal-InP reactivity. Reactive metal (e. g. , Al, Ti, or Ni) interlayers at Au-InP interfaces decrease anion diffusion and surface segregation monotonically with increasing interlayer thickness and AES depth profiles indicate a P accumulation at or just below the intimate metal-InP interface. These and other sputter-AES studies suggest that the lower (higher) Schottky barriers of reactive (unreactive) metals are associated with cation (anion) depletion within the InP bulk and on anion accumulation at the intimate InP-metal interfaces.

Original languageEnglish
Pages (from-to)618-622
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number3
DOIs
StatePublished - 1983
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: 25 Jan 198327 Jan 1983

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