Asymmetric Y-junction wavelength demultiplexer based on segmented waveguides

Z. Weissman; D. Nir; S. Ruschin; A. Hardy

doi:10.1063/1.115425

Asymmetric Y-junction wavelength demultiplexer based on segmented waveguides

Z. Weissman^*, D. Nir, S. Ruschin, A. Hardy

^*Corresponding author for this work

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

An asymmetric Y-junction wavelength demultiplexer, with a segmented branch, was realized in Ti:LiNbO₃. The device was fabricated in a single-step lithographical process. Wavelength demultiplexing operation in the range 633 nm<λ<834 nm is demonstrated, with extinction ratios up to 30 dB. Insertion loss vary between a negligible value (far away from cutoff) up to 7 dB (near cutoff). Possible applications of the device are considered.

Original language	English
Pages (from-to)	302
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115425
State	Published - 1995

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title = "Asymmetric Y-junction wavelength demultiplexer based on segmented waveguides",

abstract = "An asymmetric Y-junction wavelength demultiplexer, with a segmented branch, was realized in Ti:LiNbO3. The device was fabricated in a single-step lithographical process. Wavelength demultiplexing operation in the range 633 nm<λ<834 nm is demonstrated, with extinction ratios up to 30 dB. Insertion loss vary between a negligible value (far away from cutoff) up to 7 dB (near cutoff). Possible applications of the device are considered.",

author = "Z. Weissman and D. Nir and S. Ruschin and A. Hardy",

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N2 - An asymmetric Y-junction wavelength demultiplexer, with a segmented branch, was realized in Ti:LiNbO3. The device was fabricated in a single-step lithographical process. Wavelength demultiplexing operation in the range 633 nm<λ<834 nm is demonstrated, with extinction ratios up to 30 dB. Insertion loss vary between a negligible value (far away from cutoff) up to 7 dB (near cutoff). Possible applications of the device are considered.

AB - An asymmetric Y-junction wavelength demultiplexer, with a segmented branch, was realized in Ti:LiNbO3. The device was fabricated in a single-step lithographical process. Wavelength demultiplexing operation in the range 633 nm<λ<834 nm is demonstrated, with extinction ratios up to 30 dB. Insertion loss vary between a negligible value (far away from cutoff) up to 7 dB (near cutoff). Possible applications of the device are considered.

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Asymmetric Y-junction wavelength demultiplexer based on segmented waveguides

Abstract

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