Anomalous Hall coefficients of a polycrystalline Bismuth film measured in parallel magnetic fields

Ralph Rosenbaum, Tim Murphy

Research output: Contribution to journalConference articlepeer-review

Abstract

Hall coefficient measurements have been performed on a polycrystalline 11875Å Bismuth film in fields oriented parallel to the current flow. Classical theory predicts no Hall voltages and no magnetoresistances (MRs) in parallel fields. Probably owing to diffused and specular scattering off the rough surfaces of the crystallites, Hall voltages and parallel MR's are easily measured. Hall coefficient data in parallel Bs are summarized at 295, 78, and 1.49K. The data are interpreted using the Pippard-Fawcett expression and the Landau tube model that contributes additional carriers at high fields.

Original languageEnglish
Pages (from-to)296-300
Number of pages5
JournalPhysica B: Condensed Matter
Volume346-347
Issue number1-4
DOIs
StatePublished - 30 Apr 2004
EventProceedings of the 7th International Symposium on Research - Toulouse, France
Duration: 20 Jul 200323 Jul 2003

Keywords

  • Bismuth
  • Electronic transport
  • Hall coefficient
  • Magnetoresistance
  • Parallel fields
  • Polycrystalline films

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