ANOMALOUS EFFECT OF UHV-COMPONENT-GENERATED ATOMIC HYDROGEN ON THE SURFACE PROPERTIES OF ZnO.

Y. Shapira*, David Lichtman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

It is well known that atomic hydrogen can cause significant changes in surface conductivity of many semiconductors such as ZnO. It was found that some of the atomic hydrogen produced during the operation of ionization gages, ion pumps, and titanium sublimators can reach ZnO samples even when the samples have no line of sight to these devices. Conductivity changes of many orders of magnitude are produced when the residual-gas background contains sufficient amounts of hydrogen. This effect must be considered when surface conductivity measurements are being made on materials such as ZnO.

Original languageEnglish
Pages (from-to)615-617
Number of pages3
JournalJournal of Vacuum Science and Technology
Volume13
Issue number2
DOIs
StatePublished - 1976

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