Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride

A. Ruzin; O. Sinkevich; G. Cohen-Taguri; I. Goldfarb

doi:10.1063/1.4754706

Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride

A. Ruzin, O. Sinkevich, G. Cohen-Taguri, I. Goldfarb

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, experimental characterization results of indium nano-contacts are presented. The indium nano-contacts are epitaxially grown on a two-dimensional surface of high-resistivity, n-type Cd_0.9Zn _0.1Te in ultra-high vacuum. The scaling effect in these contacts is systematic, but not linear. It is shown that the contacts exhibit a profoundly asymmetric behavior. It is argued that the "rectifying" behavior of these contacts is due to tunneling and that the tunneling does not necessarily imply Schottky nature.

Original language	English
Article number	132108
Journal	Applied Physics Letters
Volume	101
Issue number	13
DOIs	https://doi.org/10.1063/1.4754706
State	Published - 24 Sep 2012

Access to Document

10.1063/1.4754706

Cite this

@article{71fc10d7495349d89cfbf91a027924b7,

title = "Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride",

abstract = "In this work, experimental characterization results of indium nano-contacts are presented. The indium nano-contacts are epitaxially grown on a two-dimensional surface of high-resistivity, n-type Cd0.9Zn 0.1Te in ultra-high vacuum. The scaling effect in these contacts is systematic, but not linear. It is shown that the contacts exhibit a profoundly asymmetric behavior. It is argued that the {"}rectifying{"} behavior of these contacts is due to tunneling and that the tunneling does not necessarily imply Schottky nature.",

author = "A. Ruzin and O. Sinkevich and G. Cohen-Taguri and I. Goldfarb",

year = "2012",

month = sep,

day = "24",

doi = "10.1063/1.4754706",

language = "אנגלית",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride

AU - Ruzin, A.

AU - Sinkevich, O.

AU - Cohen-Taguri, G.

AU - Goldfarb, I.

PY - 2012/9/24

Y1 - 2012/9/24

N2 - In this work, experimental characterization results of indium nano-contacts are presented. The indium nano-contacts are epitaxially grown on a two-dimensional surface of high-resistivity, n-type Cd0.9Zn 0.1Te in ultra-high vacuum. The scaling effect in these contacts is systematic, but not linear. It is shown that the contacts exhibit a profoundly asymmetric behavior. It is argued that the "rectifying" behavior of these contacts is due to tunneling and that the tunneling does not necessarily imply Schottky nature.

AB - In this work, experimental characterization results of indium nano-contacts are presented. The indium nano-contacts are epitaxially grown on a two-dimensional surface of high-resistivity, n-type Cd0.9Zn 0.1Te in ultra-high vacuum. The scaling effect in these contacts is systematic, but not linear. It is shown that the contacts exhibit a profoundly asymmetric behavior. It is argued that the "rectifying" behavior of these contacts is due to tunneling and that the tunneling does not necessarily imply Schottky nature.

UR - http://www.scopus.com/inward/record.url?scp=84886564554&partnerID=8YFLogxK

U2 - 10.1063/1.4754706

DO - 10.1063/1.4754706

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84886564554

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132108

ER -

Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride

Abstract

Access to Document

Other files and links

Fingerprint

Cite this