Abstract
In this work, experimental characterization results of indium nano-contacts are presented. The indium nano-contacts are epitaxially grown on a two-dimensional surface of high-resistivity, n-type Cd0.9Zn 0.1Te in ultra-high vacuum. The scaling effect in these contacts is systematic, but not linear. It is shown that the contacts exhibit a profoundly asymmetric behavior. It is argued that the "rectifying" behavior of these contacts is due to tunneling and that the tunneling does not necessarily imply Schottky nature.
Original language | English |
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Article number | 132108 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 13 |
DOIs | |
State | Published - 24 Sep 2012 |