Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

Feng Miao; John Paul Strachan; J. Joshua Yang; Min Xian Zhang; Ilan Goldfarb; Antonio C. Torrezan; Peter Eschbach; Ronald D. Kelley; Gilberto Medeiros-Ribeiro; R. Stanley Williams

doi:10.1002/adma.201103379

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

Feng Miao, John Paul Strachan, J. Joshua Yang^*, Min Xian Zhang, Ilan Goldfarb, Antonio C. Torrezan, Peter Eschbach, Ronald D. Kelley, Gilberto Medeiros-Ribeiro, R. Stanley Williams

^*Corresponding author for this work

Hewlett-Packard

Research output: Contribution to journal › Article › peer-review

401 Scopus citations

Abstract

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta ₂O ₅ is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

Original language	English
Pages (from-to)	5633-5640
Number of pages	8
Journal	Advanced Materials
Volume	23
Issue number	47
DOIs	https://doi.org/10.1002/adma.201103379
State	Published - 15 Dec 2011
Externally published	Yes

Keywords

memory
oxides
resistive random access memory (RRAM)
switches

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abstract = "By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta 2O 5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.",

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AU - Miao, Feng

AU - Strachan, John Paul

AU - Yang, J. Joshua

AU - Zhang, Min Xian

AU - Goldfarb, Ilan

AU - Torrezan, Antonio C.

AU - Eschbach, Peter

AU - Kelley, Ronald D.

AU - Medeiros-Ribeiro, Gilberto

AU - Williams, R. Stanley

PY - 2011/12/15

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AB - By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta 2O 5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

KW - memory

KW - oxides

KW - resistive random access memory (RRAM)

KW - switches

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ER -

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

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Keywords

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