Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

Feng Miao, John Paul Strachan, J. Joshua Yang, Min Xian Zhang, Ilan Goldfarb, Antonio C. Torrezan, Peter Eschbach, Ronald D. Kelley, Gilberto Medeiros-Ribeiro, R. Stanley Williams

Research output: Contribution to journalArticlepeer-review

Abstract

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta 2O 5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

Original languageEnglish
Pages (from-to)5633-5640
Number of pages8
JournalAdvanced Materials
Volume23
Issue number47
DOIs
StatePublished - 15 Dec 2011
Externally publishedYes

Keywords

  • memory
  • oxides
  • resistive random access memory (RRAM)
  • switches

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