Analytical model for ArF photoresist shrinkage under scanning electron microscopy inspection

Guy Ayal, David Andelman*, Yachin Cohen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Linewidth slimming is a phenomenon occurring specifically in photolithography of 193 nm wavelength (ArF) radiation. Photoresists for this wavelength appear to lose volume when exposed to electron-beam radiation, as when scanned in scanning electron microscopy for critical dimension (linewidth) measurement. This work is an attempt to understand this "shrinkage" from a polymer physics point of view. More specifically, the authors try to check the applicability of free volume theory in polymer systems by calculating some relevant physical properties, assuming that the exposure to e-beam creates an external hardened shell for the material bulk, and continued exposure will deliver heat into the polymer enclosed in a confined space. The authors' main conclusion is that the free volume loss (annealing) shows qualitative resemblance to experiment, but this effect exclusively is not a sufficient quantitative explanation for the observed shrinkage. A possible explanation for this discrepancy is that their model is limited due to unknown material parameters, or that the annealing is coupled with other effects such as "wringing" solvent out.

Original languageEnglish
Pages (from-to)1976-1983
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number4
DOIs
StatePublished - 2009

Funding

FundersFunder number
U.S.-Israel Binational Foundation
United States-Israel Binational Science Foundation2006/055
Israel Science Foundation231/08

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