An X-band low noise InP-HBT VCO with separate optimized varactor layers

T. Magrisso, D. Elad, N. Buadana, S. Kraus, D. Cohen Elias, A. Gavrilov, S. Cohen, D. Ritter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94dBc/Hz at 100KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30mW while providing -3dBm output power. The over all chip size is 1.3×0.8 mm2.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages661-664
Number of pages4
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/TerritoryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Keywords

  • Heterojunction bipolar transistor (HBT)
  • InP
  • Monolithic microwave integrated circuit (MMIC)
  • Oscillator
  • Varactor
  • Voltage-controlled oscillator (VCO)

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