An X-band low noise InP-HBT VCO with separate optimized varactor layers

T. Magrisso; D. Elad; N. Buadana; S. Kraus; D. Cohen Elias; A. Gavrilov; S. Cohen; D. Ritter

doi:10.1109/MWSYM.2007.380006

An X-band low noise InP-HBT VCO with separate optimized varactor layers

T. Magrisso, D. Elad, N. Buadana, S. Kraus, D. Cohen Elias, A. Gavrilov, S. Cohen, D. Ritter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94dBc/Hz at 100KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30mW while providing -3dBm output power. The over all chip size is 1.3×0.8 mm².

Original language	English
Title of host publication	2007 IEEE MTT-S International Microwave Symposium Digest
Pages	661-664
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2007.380006
State	Published - 2007
Externally published	Yes
Event	2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 8 Jun 2007

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/Territory	United States
City	Honolulu, HI
Period	3/06/07 → 8/06/07

Keywords

Heterojunction bipolar transistor (HBT)
InP
Monolithic microwave integrated circuit (MMIC)
Oscillator
Varactor
Voltage-controlled oscillator (VCO)

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10.1109/MWSYM.2007.380006

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title = "An X-band low noise InP-HBT VCO with separate optimized varactor layers",

abstract = "A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94dBc/Hz at 100KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30mW while providing -3dBm output power. The over all chip size is 1.3×0.8 mm2.",

keywords = "Heterojunction bipolar transistor (HBT), InP, Monolithic microwave integrated circuit (MMIC), Oscillator, Varactor, Voltage-controlled oscillator (VCO)",

author = "T. Magrisso and D. Elad and N. Buadana and S. Kraus and Elias, {D. Cohen} and A. Gavrilov and S. Cohen and D. Ritter",

year = "2007",

doi = "10.1109/MWSYM.2007.380006",

language = "אנגלית",

isbn = "1424406889",

series = "IEEE MTT-S International Microwave Symposium Digest",

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note = "null ; Conference date: 03-06-2007 Through 08-06-2007",

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Magrisso, T, Elad, D, Buadana, N, Kraus, S, Elias, DC, Gavrilov, A, Cohen, S & Ritter, D 2007, An X-band low noise InP-HBT VCO with separate optimized varactor layers. in 2007 IEEE MTT-S International Microwave Symposium Digest., 4263903, IEEE MTT-S International Microwave Symposium Digest, pp. 661-664, 2007 IEEE MTT-S International Microwave Symposium, IMS 2007, Honolulu, HI, United States, 3/06/07. https://doi.org/10.1109/MWSYM.2007.380006

An X-band low noise InP-HBT VCO with separate optimized varactor layers. / Magrisso, T.; Elad, D.; Buadana, N.; Kraus, S.; Elias, D. Cohen; Gavrilov, A.; Cohen, S.; Ritter, D.

2007 IEEE MTT-S International Microwave Symposium Digest. 2007. p. 661-664 4263903 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Gavrilov, A.

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KW - Monolithic microwave integrated circuit (MMIC)

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An X-band low noise InP-HBT VCO with separate optimized varactor layers

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