TY - JOUR
T1 - An SRAM based on the MSET device
AU - Peled, Assaf
AU - Hu, Xuan
AU - Amrani, Ofer
AU - Friedman, Joseph S.
AU - Rosenwaks, Yossi
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/3
Y1 - 2019/3
N2 - From its conceptual inception in 2015, the combined capabilities of the multiple-state electrostatically formed nanowire transistor (MSET) have given way to a unique set of logic structures-in the example of NAND and NOR gates-which utilize fewer transistors as compared to conventional technologies. In this paper, we expand the recently published framework of MSET logic functions and present a static random access memory (SRAM) memory structure that consists entirely of MSET devices. Using TCAD simulations, we demonstrate the MSET-SRAM functionality in several phases of operation, while analyzing its performance in terms of speed, stability, and power consumption.
AB - From its conceptual inception in 2015, the combined capabilities of the multiple-state electrostatically formed nanowire transistor (MSET) have given way to a unique set of logic structures-in the example of NAND and NOR gates-which utilize fewer transistors as compared to conventional technologies. In this paper, we expand the recently published framework of MSET logic functions and present a static random access memory (SRAM) memory structure that consists entirely of MSET devices. Using TCAD simulations, we demonstrate the MSET-SRAM functionality in several phases of operation, while analyzing its performance in terms of speed, stability, and power consumption.
KW - Device simulations
KW - Multigate transistors
KW - Multiple-state electrostatically formed nanowire transistor (MSET) transistor
KW - Static random access memory (SRAM)
UR - http://www.scopus.com/inward/record.url?scp=85062284421&partnerID=8YFLogxK
U2 - 10.1109/TED.2019.2892319
DO - 10.1109/TED.2019.2892319
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AN - SCOPUS:85062284421
SN - 0018-9383
VL - 66
SP - 1262
EP - 1267
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
M1 - 8626485
ER -