An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation

Firass Mustafa, Eliezer Halpern, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479974733
DOIs
StatePublished - 17 Dec 2015
EventIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel
Duration: 2 Nov 20154 Nov 2015

Publication series

Name2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015

Conference

ConferenceIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
Country/TerritoryIsrael
CityTel-Aviv
Period2/11/154/11/15

Keywords

  • Amplifiers
  • CMOS millimeter-wave (mm-wave) frequency multiplier
  • W-band
  • X-band
  • bonding
  • power amplifier (PA)
  • transformers

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