TY - GEN
T1 - An F-Band Reflection Amplifier using 28 nm CMOS FD-SOI Technology for Active Reflectarrays and Spatial Power Combining Applications
AU - Landsberg, Naftali
AU - Socher, Eran
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/9
Y1 - 2016/8/9
N2 - A new topology of a reflection amplifier is proposed and demonstrated using a CMOS FD-SOI 28 nm process for high gain reflectarray antenna applications. The design is based on two sets of cross coupled pairs which are coupled inductively. An internal oscillations-block was implemented in order to improve the stability of the amplifier. Variable stable gain of 5-25 dB at the bandwidth of 106-127 GHz was achieved, with output power of up to 0 dBm (measurement limited). The total power consumption was 6-20 mW, depending on the exact bias configuration. The reflection amplifier results with a 3-dB bandwidth of up to 18%. The design consumes a core area of only 90×80 μm2 and allows the implementation of high efficiency active reflectarray antennas.
AB - A new topology of a reflection amplifier is proposed and demonstrated using a CMOS FD-SOI 28 nm process for high gain reflectarray antenna applications. The design is based on two sets of cross coupled pairs which are coupled inductively. An internal oscillations-block was implemented in order to improve the stability of the amplifier. Variable stable gain of 5-25 dB at the bandwidth of 106-127 GHz was achieved, with output power of up to 0 dBm (measurement limited). The total power consumption was 6-20 mW, depending on the exact bias configuration. The reflection amplifier results with a 3-dB bandwidth of up to 18%. The design consumes a core area of only 90×80 μm2 and allows the implementation of high efficiency active reflectarray antennas.
KW - CMOS circuits
KW - Microwave amplifiers
KW - millimeter wave circuits
KW - reflector antennas
KW - silicon on insulator technology
UR - http://www.scopus.com/inward/record.url?scp=84984940575&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2016.7540288
DO - 10.1109/MWSYM.2016.7540288
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AN - SCOPUS:84984940575
T3 - IEEE MTT-S International Microwave Symposium Digest
BT - 2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Y2 - 22 May 2016 through 27 May 2016
ER -