An F-Band Reflection Amplifier using 28 nm CMOS FD-SOI Technology for Active Reflectarrays and Spatial Power Combining Applications

Naftali Landsberg, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new topology of a reflection amplifier is proposed and demonstrated using a CMOS FD-SOI 28 nm process for high gain reflectarray antenna applications. The design is based on two sets of cross coupled pairs which are coupled inductively. An internal oscillations-block was implemented in order to improve the stability of the amplifier. Variable stable gain of 5-25 dB at the bandwidth of 106-127 GHz was achieved, with output power of up to 0 dBm (measurement limited). The total power consumption was 6-20 mW, depending on the exact bias configuration. The reflection amplifier results with a 3-dB bandwidth of up to 18%. The design consumes a core area of only 90×80 μm2 and allows the implementation of high efficiency active reflectarray antennas.

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - 9 Aug 2016
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: 22 May 201627 May 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Country/TerritoryUnited States
CitySan Francisco
Period22/05/1627/05/16

Keywords

  • CMOS circuits
  • Microwave amplifiers
  • millimeter wave circuits
  • reflector antennas
  • silicon on insulator technology

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