@inproceedings{ec411ba6a8234f9f9b32031cc5233325,
title = "An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver",
abstract = "A dual band F-band packaged transceiver at 95GHz and 130GHz in 65nm CMOS technology is presented. The transceiver architecture is based on a bi-directional operation with a maximum data rate of up to 12Gbps per band. Maximum output power on-chip of -0.5dBm and -1.5dBm were achieved in the low band (95GHz) and high band (130GHz) respectively and 12+12Gbps modulated signals are measured off-chip in the transmit mode. In the receive mode a BER<10-12 was achieved for the low band with data rates up to 12Gbps limited by the measurement equipment. The packaged transceiver demonstrates 10+10Gbps wireline bi-directional half-duplex communication with 41mW power consumption and 10+8Gbps full-duplex communication with 37.5mW power consumption, thus achieving 2pJ/bit of energy efficiency in the whole transceiver. The chip occupies an overall area of only 0.44mm2.",
keywords = "CMOS, F-band, mm-wave, package, printed circuit board (PCB), transceiver, transition, waveguide",
author = "Nir Weissman and Samuel Jameson and Eran Socher",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",
year = "2016",
month = aug,
day = "9",
doi = "10.1109/MWSYM.2016.7540217",
language = "אנגלית",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",
address = "ארצות הברית",
}
