An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver

Nir Weissman, Samuel Jameson, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A dual band F-band packaged transceiver at 95GHz and 130GHz in 65nm CMOS technology is presented. The transceiver architecture is based on a bi-directional operation with a maximum data rate of up to 12Gbps per band. Maximum output power on-chip of -0.5dBm and -1.5dBm were achieved in the low band (95GHz) and high band (130GHz) respectively and 12+12Gbps modulated signals are measured off-chip in the transmit mode. In the receive mode a BER<10-12 was achieved for the low band with data rates up to 12Gbps limited by the measurement equipment. The packaged transceiver demonstrates 10+10Gbps wireline bi-directional half-duplex communication with 41mW power consumption and 10+8Gbps full-duplex communication with 37.5mW power consumption, thus achieving 2pJ/bit of energy efficiency in the whole transceiver. The chip occupies an overall area of only 0.44mm2.

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - 9 Aug 2016
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: 22 May 201627 May 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Country/TerritoryUnited States
CitySan Francisco
Period22/05/1627/05/16

Keywords

  • CMOS
  • F-band
  • mm-wave
  • package
  • printed circuit board (PCB)
  • transceiver
  • transition
  • waveguide

Fingerprint

Dive into the research topics of 'An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver'. Together they form a unique fingerprint.

Cite this