An abrupt InP-GaInAs-InP DHBT

D. Cohen Elias*, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, D. Ritter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with ND = 3 × 1019 cm -3. The obtained fΤ and fMAX values at a current density of 1 mA/μm2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

Original languageEnglish
Pages (from-to)14-16
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - Jan 2005
Externally publishedYes


  • Doping
  • Double heterojunction bipolar transistors (DHBTs)
  • Energy barrier
  • InP


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