An abrupt InP-GaInAs-InP DHBT

D. Cohen Elias; S. Kraus; A. Gavrilov; S. Cohen; N. Buadana; V. Sidorov; D. Ritter

doi:10.1109/LED.2004.840707

An abrupt InP-GaInAs-InP DHBT

D. Cohen Elias^*, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, D. Ritter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with N_D = 3 × 10¹⁹ cm ^-3. The obtained f_Τ and f_MAX values at a current density of 1 mA/μm² are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

Original language	English
Pages (from-to)	14-16
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1109/LED.2004.840707
State	Published - Jan 2005
Externally published	Yes

Keywords

Doping
Double heterojunction bipolar transistors (DHBTs)
Energy barrier
InP

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10.1109/LED.2004.840707

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title = "An abrupt InP-GaInAs-InP DHBT",

abstract = "We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with ND = 3 × 1019 cm -3. The obtained fΤ and fMAX values at a current density of 1 mA/μm2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.",

keywords = "Doping, Double heterojunction bipolar transistors (DHBTs), Energy barrier, InP",

author = "Elias, {D. Cohen} and S. Kraus and A. Gavrilov and S. Cohen and N. Buadana and V. Sidorov and D. Ritter",

year = "2005",

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AU - Elias, D. Cohen

AU - Kraus, S.

AU - Gavrilov, A.

AU - Cohen, S.

AU - Buadana, N.

AU - Sidorov, V.

AU - Ritter, D.

PY - 2005/1

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N2 - We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with ND = 3 × 1019 cm -3. The obtained fΤ and fMAX values at a current density of 1 mA/μm2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

AB - We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with ND = 3 × 1019 cm -3. The obtained fΤ and fMAX values at a current density of 1 mA/μm2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

KW - Doping

KW - Double heterojunction bipolar transistors (DHBTs)

KW - Energy barrier

KW - InP

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An abrupt InP-GaInAs-InP DHBT

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Keywords

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