We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with ND = 3 × 1019 cm -3. The obtained fΤ and fMAX values at a current density of 1 mA/μm2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.
- Double heterojunction bipolar transistors (DHBTs)
- Energy barrier