@inproceedings{e2245d7af67d480393535015641c62f9,
title = "All-electronic terahertz imaging: Planar emitters and detectors at 220 GHz in CMOS technology",
abstract = "We present an all-electronic raster-scan imaging system for 220 GHz which is fully based on planar CMOS integrated circuit components. The emitter has been implemented in 90-nm CMOS process and delivers up to 50 μW at 220 GHz. The detector, based on a patch-antenna-coupled field-effect transistor pair has been implemented in a 150-nm CMOS process and exhibits a maximum responsivity of 180 V/W at 213 GHz and a bandwidth of 5% at FWHM. Our preliminary imaging results achieve an SNR of 20 dB at the equivalent noise bandwidth of 5 Hz.",
author = "A. Lisauskas and B. Khamaisi and S. Boppel and M. Mundt and V. Krozer and E. Socher and Roskos, {H. G.}",
year = "2012",
doi = "10.1109/IRMMW-THz.2012.6379497",
language = "אנגלית",
isbn = "9781467315975",
series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",
booktitle = "IRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves",
note = "null ; Conference date: 23-09-2012 Through 28-09-2012",
}