All-electronic terahertz imaging: Planar emitters and detectors at 220 GHz in CMOS technology

A. Lisauskas*, B. Khamaisi, S. Boppel, M. Mundt, V. Krozer, E. Socher, H. G. Roskos

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present an all-electronic raster-scan imaging system for 220 GHz which is fully based on planar CMOS integrated circuit components. The emitter has been implemented in 90-nm CMOS process and delivers up to 50 μW at 220 GHz. The detector, based on a patch-antenna-coupled field-effect transistor pair has been implemented in a 150-nm CMOS process and exhibits a maximum responsivity of 180 V/W at 213 GHz and a bandwidth of 5% at FWHM. Our preliminary imaging results achieve an SNR of 20 dB at the equivalent noise bandwidth of 5 Hz.

Original languageEnglish
Title of host publicationIRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves
DOIs
StatePublished - 2012
Event37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012 - Wollongong, NSW, Australia
Duration: 23 Sep 201228 Sep 2012

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
Country/TerritoryAustralia
CityWollongong, NSW
Period23/09/1228/09/12

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