Activation energy of electromigration in copper thin film conductor lines

A. Gladkikh*, Y. Lereah, M. Karpovski, A. Palevski, Yu S. Kaganovskii

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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