Activation energy of electromigration in copper thin film conductor lines

A. Gladkikh; Y. Lereah; M. Karpovski; A. Palevski; Yu S. Kaganovskii

doi:10.1557/proc-427-121

Activation energy of electromigration in copper thin film conductor lines

A. Gladkikh, Y. Lereah, M. Karpovski, A. Palevski, Yu S. Kaganovskii

School of Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

Abstract

Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

Original language	English
Pages (from-to)	121-126
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	427
DOIs	https://doi.org/10.1557/proc-427-121
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 11 Apr 1996

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@article{f9e0ee917c00472a8d4195edefe90a3e,

title = "Activation energy of electromigration in copper thin film conductor lines",

abstract = "Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.",

author = "A. Gladkikh and Y. Lereah and M. Karpovski and A. Palevski and Kaganovskii, {Yu S.}",

year = "1996",

doi = "10.1557/proc-427-121",

language = "אנגלית",

volume = "427",

pages = "121--126",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "null ; Conference date: 08-04-1996 Through 11-04-1996",

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T1 - Activation energy of electromigration in copper thin film conductor lines

AU - Gladkikh, A.

AU - Lereah, Y.

AU - Karpovski, M.

AU - Palevski, A.

AU - Kaganovskii, Yu S.

PY - 1996

Y1 - 1996

N2 - Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

AB - Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

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VL - 427

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EP - 126

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 8 April 1996 through 11 April 1996

ER -

Activation energy of electromigration in copper thin film conductor lines

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