Activation energy of electromigration in copper thin film conductor lines

A. Gladkikh, Y. Lereah, M. Karpovski, A. Palevski, Yu S. Kaganovskii

Research output: Contribution to journalConference articlepeer-review

Abstract

Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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