Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1996|
|Event||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
Duration: 8 Apr 1996 → 11 Apr 1996