TY - JOUR
T1 - Activation energy of electromigration in copper thin film conductor lines
AU - Gladkikh, A.
AU - Lereah, Y.
AU - Karpovski, M.
AU - Palevski, A.
AU - Kaganovskii, Yu S.
PY - 1996
Y1 - 1996
N2 - Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.
AB - Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.
UR - http://www.scopus.com/inward/record.url?scp=0030408546&partnerID=8YFLogxK
U2 - 10.1557/proc-427-121
DO - 10.1557/proc-427-121
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AN - SCOPUS:0030408546
SN - 0272-9172
VL - 427
SP - 121
EP - 126
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 8 April 1996 through 11 April 1996
ER -