Abstract
Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.
Original language | English |
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Pages (from-to) | 121-126 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 427 |
DOIs | |
State | Published - 1996 |
Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 11 Apr 1996 |