Activated Single Photon Emitters And Enhanced Deep-Level Emissions in Hexagonal Boron Nitride Strain Crystal

Xiang Chen, Xinxin Yue, Lifu Zhang, Xiaodan Xu, Fang Liu, Min Feng, Zhenpeng Hu, Yuan Yan, Jacob Scheuer, Xuewen Fu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The peculiar defect-related photon emission processes in 2D hexagonal boron nitride (hBN) have become a topic of intense research due to their potential applications in quantum information and sensing technologies. Here, it is reported on exotic single photons and enhanced deep-level emissions in 2D hBN strain crystal, which is fabricated by transferring multilayer hBN onto hexagonal close-packed silica spheres on a silica substrate. Effective activation of single photon emission is realized from the defect ensembles in the multilayer hBN at positions that are in contact with the apex of the SiO2 spheres. At these points, the local tensile strain-induced overall blue shift of the SPE ensembles is up to 12 nm. Furthermore, high spatial resolution cathodoluminescence measurements show remarkable strain-enhanced deep-level emissions in the multilayer hBN with the emission intensity distribution following the periodic hexagonal pattern of the strain crystal. The maximum deep-level emission enhancement is up to 350% with an energy redshift of 6 nm. These results provide a simple on-chip compatible method for activating and tuning the defect-related photon emissions in multilayer hBN, demonstrating the potential of hBN strain crystal as a building block for future on-chip quantum nanophotonic devices.

Original languageEnglish
Article number2306128
JournalAdvanced Functional Materials
Volume34
Issue number1
DOIs
StatePublished - 2 Jan 2024

Funding

FundersFunder number
National Natural Science Foundation of China11974191, 12127803
National Natural Science Foundation of China
Nankai UniversityZB22000104, C029211101, 91923139, C02922101, 63213040, DK2300010207
Nankai University
Natural Science Foundation of Tianjin Municipality20JCZDJC00560, 20JCJQJC00210
Natural Science Foundation of Tianjin Municipality
National Key Research and Development Program of China2020YFA0309300
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities
Higher Education Discipline Innovation ProjectB23045
Higher Education Discipline Innovation Project

    Keywords

    • deep-level emissions
    • hexagonal boron nitride
    • periodic tensile strain
    • single photon emission
    • strain crystals

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