@inproceedings{5b04494247b94eee89c27a36f276f9ae,
title = "A wideband 95-140 GHz high efficiency PA in 28nm CMOS",
abstract = "This paper presents a D-band PA on 28nm CMOS demonstrating excellent gain power dissipation and bandwidth tradeoffs. It features above 10 dB gain in the frequency range 95-140 GHz while drawing 30 mA from a 1.1-V supply and 0dBm P1dB & 7dBm saturation power. The use of low K transformers enables an increase in PA BW without power and area penalty. A modified transistor core layout boosts PA gain by 0.5dB per stage. PA die area with pads is 0.55×0.4 mm2 and without pads 0.4×0.2 mm2.",
keywords = "Cross couple, D-band, Low-K, PA, PAE",
author = "Yuval Dafna and Emanuel Cohen and Eran Socher",
note = "Publisher Copyright: {\textcopyright} Copyright 2015 IEEE All rights reserved.; 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 ; Conference date: 03-12-2014 Through 05-12-2014",
year = "2014",
doi = "10.1109/EEEI.2014.7005799",
language = "אנגלית",
series = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",
address = "ארצות הברית",
}