A wideband 95-140 GHz high efficiency PA in 28nm CMOS

Yuval Dafna, Emanuel Cohen, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a D-band PA on 28nm CMOS demonstrating excellent gain power dissipation and bandwidth tradeoffs. It features above 10 dB gain in the frequency range 95-140 GHz while drawing 30 mA from a 1.1-V supply and 0dBm P1dB & 7dBm saturation power. The use of low K transformers enables an increase in PA BW without power and area penalty. A modified transistor core layout boosts PA gain by 0.5dB per stage. PA die area with pads is 0.55×0.4 mm2 and without pads 0.4×0.2 mm2.

Original languageEnglish
Title of host publication2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479959877
DOIs
StatePublished - 2014
Event2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel
Duration: 3 Dec 20145 Dec 2014

Publication series

Name2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conference

Conference2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Country/TerritoryIsrael
CityEilat
Period3/12/145/12/14

Keywords

  • Cross couple
  • D-band
  • Low-K
  • PA
  • PAE

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