A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

V. K. Lazarov, A. Kohn, T. Uhrmann, T. Dimopoulos, H. Brückl, H. Achard, C. Baraduc, S. Vizzini, H. Oughaddou, B. Aufray, A. D'Avitaya

Research output: Contribution to journalArticlepeer-review

Abstract

We present a TEM/STEM study of the structure and thermal stability of Co/AlOx/Si, CoFe(B)/MgO/Si and FeNi/SiOx/Si magnetic junctions deposited directly on patterned Si. In all three types of junctions the films are uniform and continuous. Annealing at 300 at 550°C does not change their structure. CoFe and CoFeB layers remained amorphous after the annealing process.

Original languageEnglish
Article number012002
JournalJournal of Physics: Conference Series
Volume126
DOIs
StatePublished - 2008
Externally publishedYes

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