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A study of super-bandgap time-resolved luminescence in InP
E. Poles
*
,
D. Huppert
,
Y. Rosenwaks
*
Corresponding author for this work
School of Chemistry
School of Electrical Engineering
Tel Aviv University
Research output
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Article
›
peer-review
1
Scopus citations
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Keyphrases
Band Gap
100%
Time-resolved Photoluminescence
100%
Energy-resolved
66%
Transport Properties
33%
Rate-based
33%
Luminescence Spectra
33%
Low Energy
33%
Time-resolved
33%
Transport Model
33%
Fermi-Dirac
33%
Cooling Rate
33%
Electron Holes
33%
Carrier Transport
33%
Banded Structure
33%
Energy Gap
33%
Transport Phenomena
33%
Quasi-Fermi Levels
33%
Excess Carrier Concentration
33%
Degenerate Electrons
33%
Carrier Cooling
33%
Crystal Surface
33%
Dirac Carriers
33%
Carrier Statistics
33%
Luminescence Decay
33%
Hole Gas
33%
Nonparabolic Conduction Band
33%
Energy Loss Process
33%
Physics
Energy Gaps (Solid State)
100%
Photoluminescence
100%
Transport Property
50%
Holes (Electron Deficiencies)
50%
Conduction Band
50%
Transport Phenomena
50%
Crystal Surface
50%
Transport Theory
50%
Engineering
Energy Engineering
100%
Energy Dissipation
33%
Conduction Band
33%
Carrier Concentration
33%
Energy Gap
33%
Fermi Level
33%
Excess Carrier
33%
Band Structure
33%
Crystal Surface
33%
Cooling Rate
33%
Transport Phenomena
33%
Computer Science
Conduction Band
100%
Carrier Concentration
100%
Transport Model
100%
Material Science
Luminescence
100%
Photoluminescence
66%
Carrier Concentration
33%
Carrier Transport
33%
Transport Phenomena
33%