A study of super-bandgap time-resolved luminescence in InP

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Abstract

Super-bandgap time-resolved photoluminescence is used to measure the transport properties of a degenerate electron-hole gas in InP. It is found that the luminescence decay at energies above the energy gap is governed by the shift of the electron quasi-Fermi level to lower energies; this shift is due to a change in the excess carrier concentration as a result of diffusion perpendicular to the crystal surface. The results are analysed using a transport model based on the Fermi - Dirac carrier statistics and non-parabolic conduction band structure; the effect of these factors on the time-resolved and energy-resolved luminescence spectra is examined. It is found that the perpendicular carrier transport affects the energy-resolved spectra in a similar way to carrier energy loss processes. This implies that analysis of carrier cooling rates based on time-resolved photoluminescence experiments must take into account transport phenomena.

Original languageEnglish
Pages (from-to)1252-1256
Number of pages5
JournalSemiconductor Science and Technology
Volume12
Issue number10
DOIs
StatePublished - Oct 1997

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