Abstract
Super-bandgap time-resolved photoluminescence is used to measure the transport properties of a degenerate electron-hole gas in InP. It is found that the luminescence decay at energies above the energy gap is governed by the shift of the electron quasi-Fermi level to lower energies; this shift is due to a change in the excess carrier concentration as a result of diffusion perpendicular to the crystal surface. The results are analysed using a transport model based on the Fermi - Dirac carrier statistics and non-parabolic conduction band structure; the effect of these factors on the time-resolved and energy-resolved luminescence spectra is examined. It is found that the perpendicular carrier transport affects the energy-resolved spectra in a similar way to carrier energy loss processes. This implies that analysis of carrier cooling rates based on time-resolved photoluminescence experiments must take into account transport phenomena.
| Original language | English |
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| Pages (from-to) | 1252-1256 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 12 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1997 |