A study of Fe-doped and undoped InP by surface photovoltage spectroscopy

L. Burstein, Y. Shapira

Research output: Contribution to journalArticlepeer-review

Abstract

Surface properties of Fe-doped and undoped InP samples as-grown and after various chemical treatments have been studied using surface photovoltage spectroscopy. Two surface states, a deep acceptor level at Ec-0.79 eV and a shallow donor at Ev+1.18 eV, are observed as a result of Fe doping. Surface states observed on undoped surfaces are related to different native oxide compositions produced by chemical treatments.

Original languageEnglish
Article number009
Pages (from-to)1724-1727
Number of pages4
JournalSemiconductor Science and Technology
Volume8
Issue number9
DOIs
StatePublished - 1993

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