Abstract
Surface properties of Fe-doped and undoped InP samples as-grown and after various chemical treatments have been studied using surface photovoltage spectroscopy. Two surface states, a deep acceptor level at Ec-0.79 eV and a shallow donor at Ev+1.18 eV, are observed as a result of Fe doping. Surface states observed on undoped surfaces are related to different native oxide compositions produced by chemical treatments.
Original language | English |
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Article number | 009 |
Pages (from-to) | 1724-1727 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 8 |
Issue number | 9 |
DOIs | |
State | Published - 1993 |