TY - GEN
T1 - A simultaneous tri-band on-chip rf-interconnect for future network-on-chip
AU - Tam, Sai Wang
AU - Socher, Eran
AU - Wong, Alden
AU - Chang, Mau Chung Frank
PY - 2009
Y1 - 2009
N2 - A simultaneous tri-band on-chip RF-interconnect for future network on-chip is demonstrated. Two RF bands in mm-wave frequencies, 30GHz and 50GHz, are modulated using amplitude-shift keying, while the base-band utilizes the low swing capacitive coupling technique. Each RF-Band and base-band carries 4Gbps and 2Gbps respectively. Three different bands, up to 10Gbps, are transmitted simultaneously across a shared 5mm on-chip differential transmission line. The energy per bit is 0.125pJ/b/mm in base-band, while RF-band is 0.09pJ/b/mm.
AB - A simultaneous tri-band on-chip RF-interconnect for future network on-chip is demonstrated. Two RF bands in mm-wave frequencies, 30GHz and 50GHz, are modulated using amplitude-shift keying, while the base-band utilizes the low swing capacitive coupling technique. Each RF-Band and base-band carries 4Gbps and 2Gbps respectively. Three different bands, up to 10Gbps, are transmitted simultaneously across a shared 5mm on-chip differential transmission line. The energy per bit is 0.125pJ/b/mm in base-band, while RF-band is 0.09pJ/b/mm.
UR - http://www.scopus.com/inward/record.url?scp=70449563111&partnerID=8YFLogxK
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AN - SCOPUS:70449563111
SN - 9784863480018
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - 90
EP - 91
BT - 2009 Symposium on VLSI Circuits
T2 - 2009 Symposium on VLSI Circuits
Y2 - 16 June 2009 through 18 June 2009
ER -