A Route to high-quality crystalline coaxial core/ multishell Ge@Si(GeSi)n and Si(GeSi)n nanowire heterostructures

Moshit Ben-Ishai; Fernando Patolsky

doi:10.1002/adma.200902815

A Route to high-quality crystalline coaxial core/ multishell Ge@Si(GeSi)_n and Si(GeSi)_n nanowire heterostructures

Moshit Ben-Ishai^*, Fernando Patolsky

^*Corresponding author for this work

School of Chemistry

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

"Figure Presented" The layer-by-layer formation and characterization of conformally smooth, uniform, and single-crystalline Ge(core)/Si-Ge-Si(multishell) and Si(core)/Ge-Si(multishell) nanowire heterostructures is reported. The modulation of their radial composition is well-defined and there is precise control over a wide range of shell thicknesses regardless of the initial nanowire core diameter.

Original language	English
Pages (from-to)	902-906
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	8
DOIs	https://doi.org/10.1002/adma.200902815
State	Published - 23 Feb 2010

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@article{036a6b7127b8477da246224bb51dedfe,

title = "A Route to high-quality crystalline coaxial core/ multishell Ge@Si(GeSi)n and Si(GeSi)n nanowire heterostructures",

abstract = "{"}Figure Presented{"} The layer-by-layer formation and characterization of conformally smooth, uniform, and single-crystalline Ge(core)/Si-Ge-Si(multishell) and Si(core)/Ge-Si(multishell) nanowire heterostructures is reported. The modulation of their radial composition is well-defined and there is precise control over a wide range of shell thicknesses regardless of the initial nanowire core diameter.",

author = "Moshit Ben-Ishai and Fernando Patolsky",

year = "2010",

month = feb,

day = "23",

doi = "10.1002/adma.200902815",

language = "אנגלית",

volume = "22",

pages = "902--906",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "8",

}

TY - JOUR

T1 - A Route to high-quality crystalline coaxial core/ multishell Ge@Si(GeSi)n and Si(GeSi)n nanowire heterostructures

AU - Ben-Ishai, Moshit

AU - Patolsky, Fernando

PY - 2010/2/23

Y1 - 2010/2/23

N2 - "Figure Presented" The layer-by-layer formation and characterization of conformally smooth, uniform, and single-crystalline Ge(core)/Si-Ge-Si(multishell) and Si(core)/Ge-Si(multishell) nanowire heterostructures is reported. The modulation of their radial composition is well-defined and there is precise control over a wide range of shell thicknesses regardless of the initial nanowire core diameter.

AB - "Figure Presented" The layer-by-layer formation and characterization of conformally smooth, uniform, and single-crystalline Ge(core)/Si-Ge-Si(multishell) and Si(core)/Ge-Si(multishell) nanowire heterostructures is reported. The modulation of their radial composition is well-defined and there is precise control over a wide range of shell thicknesses regardless of the initial nanowire core diameter.

UR - http://www.scopus.com/inward/record.url?scp=77249106008&partnerID=8YFLogxK

U2 - 10.1002/adma.200902815

DO - 10.1002/adma.200902815

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:77249106008

SN - 0935-9648

VL - 22

SP - 902

EP - 906

JO - Advanced Materials

JF - Advanced Materials

IS - 8

ER -

A Route to high-quality crystalline coaxial core/ multishell Ge@Si(GeSi)_n and Si(GeSi)_n nanowire heterostructures

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