A Paradigm for Integrated Circuits Based on the MSET Transistor

Assaf Peled; Ofer Amrani; Yossi Rosenwaks; Yhonatan Vaknin

doi:10.1109/TED.2017.2788563

A Paradigm for Integrated Circuits Based on the MSET Transistor

Assaf Peled^*, Ofer Amrani, Yossi Rosenwaks, Yhonatan Vaknin

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In the double-drain multistate electrostatically formed nanowire transistor (MSET), the electrostatically formed conduction channel shifts laterally by properly biasing the two side gates that enclose the bulk area. This current switching mechanism enhances functionality within a single device and sets the stage for a family of integrated-circuit building blocks that facilitate the implementation of ultralow-power Internet-of-Things applications. This paper establishes a conceptual framework for the MSET-based nand gate whose speed and power consumption are analyzed via TCAD simulations.

Original language	English
Pages (from-to)	1192-1197
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	3
DOIs	https://doi.org/10.1109/TED.2017.2788563
State	Published - Mar 2018

Keywords

Electrostatically formed nanowire
low-power devices
multigate transistors
multistate electrostatically formed nanowire transistor (MSET)

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10.1109/TED.2017.2788563

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title = "A Paradigm for Integrated Circuits Based on the MSET Transistor",

abstract = "In the double-drain multistate electrostatically formed nanowire transistor (MSET), the electrostatically formed conduction channel shifts laterally by properly biasing the two side gates that enclose the bulk area. This current switching mechanism enhances functionality within a single device and sets the stage for a family of integrated-circuit building blocks that facilitate the implementation of ultralow-power Internet-of-Things applications. This paper establishes a conceptual framework for the MSET-based nand gate whose speed and power consumption are analyzed via TCAD simulations.",

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author = "Assaf Peled and Ofer Amrani and Yossi Rosenwaks and Yhonatan Vaknin",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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AU - Rosenwaks, Yossi

AU - Vaknin, Yhonatan

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A Paradigm for Integrated Circuits Based on the MSET Transistor

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