In the double-drain multistate electrostatically formed nanowire transistor (MSET), the electrostatically formed conduction channel shifts laterally by properly biasing the two side gates that enclose the bulk area. This current switching mechanism enhances functionality within a single device and sets the stage for a family of integrated-circuit building blocks that facilitate the implementation of ultralow-power Internet-of-Things applications. This paper establishes a conceptual framework for the MSET-based nand gate whose speed and power consumption are analyzed via TCAD simulations.
- Electrostatically formed nanowire
- low-power devices
- multigate transistors
- multistate electrostatically formed nanowire transistor (MSET)