A new ultra-fast charge pumping measurement technique for NIT characterization without relaxation

D. B. Habersat; M. Gurfinkel; J. Horst; J. Kim; H. D. Xiong; K. Cheung; J. S. Suehle; A. J. Lelis; J. B. Bemstein; Y. Shapira

doi:10.1109/ISDRS.2007.4422384

A new ultra-fast charge pumping measurement technique for N_IT characterization without relaxation

D. B. Habersat, M. Gurfinkel, J. Horst, J. Kim, H. D. Xiong, K. Cheung, J. S. Suehle, A. J. Lelis, J. B. Bemstein, Y. Shapira

Department of Electrical Engineering - Physical Eng.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422384
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422384

Cite this

Habersat, D. B., Gurfinkel, M., Horst, J., Kim, J., Xiong, H. D., Cheung, K., Suehle, J. S., Lelis, A. J., Bemstein, J. B., & Shapira, Y. (2007). A new ultra-fast charge pumping measurement technique for N_IT characterization without relaxation. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422384 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422384

@inproceedings{db0c6b1d921a4b4f8cf0b7e3eaaff7fc,

title = "A new ultra-fast charge pumping measurement technique for NIT characterization without relaxation",

author = "Habersat, {D. B.} and M. Gurfinkel and J. Horst and J. Kim and Xiong, {H. D.} and K. Cheung and Suehle, {J. S.} and Lelis, {A. J.} and Bemstein, {J. B.} and Y. Shapira",

year = "2007",

doi = "10.1109/ISDRS.2007.4422384",

language = "אנגלית",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Habersat, DB, Gurfinkel, M, Horst, J, Kim, J, Xiong, HD, Cheung, K, Suehle, JS, Lelis, AJ, Bemstein, JB & Shapira, Y 2007, A new ultra-fast charge pumping measurement technique for N_IT characterization without relaxation. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422384, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422384

A new ultra-fast charge pumping measurement technique for N_IT characterization without relaxation. / Habersat, D. B.; Gurfinkel, M.; Horst, J. et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422384 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A new ultra-fast charge pumping measurement technique for NIT characterization without relaxation

AU - Habersat, D. B.

AU - Gurfinkel, M.

AU - Horst, J.

AU - Kim, J.

AU - Xiong, H. D.

AU - Cheung, K.

AU - Suehle, J. S.

AU - Lelis, A. J.

AU - Bemstein, J. B.

AU - Shapira, Y.

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Y2 - 12 December 2007 through 14 December 2007