A model of the trapping media in microFLASH® memory cells

Rachel Avichail-Bibi; David Fuks; Arnold Kiv; Tatiana Maximova; Yakov Roizin; Micha Gutman

doi:10.1016/j.jmatprotec.2004.04.062

A model of the trapping media in microFLASH® memory cells

Rachel Avichail-Bibi^*, David Fuks, Arnold Kiv, Tatiana Maximova, Yakov Roizin, Micha Gutman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A computer model for the dielectric trapping layer in the microFLASH® memory transistor is developed. Molecular dynamics method was used to design a cluster of atoms with dielectric properties and to perform computer simulation of the redistribution of the injected charges in the program/erase processes. The charge distributions obtained on the basis of proposed model are strongly influenced by Coulomb repulsion between the trapped charge carriers. This effect leads to non-Gaussian discrete space distribution of trapped charges and significantly influences the endurance of the memory device.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Journal of Materials Processing Technology
Volume	153-154
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmatprotec.2004.04.062
State	Published - 10 Nov 2004
Externally published	Yes

Keywords

Carriers migration
Computer model of dielectric
Coulomb correlation effects
Molecular dynamics simulation

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10.1016/j.jmatprotec.2004.04.062

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title = "A model of the trapping media in microFLASH{\textregistered} memory cells",

abstract = "A computer model for the dielectric trapping layer in the microFLASH{\textregistered} memory transistor is developed. Molecular dynamics method was used to design a cluster of atoms with dielectric properties and to perform computer simulation of the redistribution of the injected charges in the program/erase processes. The charge distributions obtained on the basis of proposed model are strongly influenced by Coulomb repulsion between the trapped charge carriers. This effect leads to non-Gaussian discrete space distribution of trapped charges and significantly influences the endurance of the memory device.",

keywords = "Carriers migration, Computer model of dielectric, Coulomb correlation effects, Molecular dynamics simulation",

author = "Rachel Avichail-Bibi and David Fuks and Arnold Kiv and Tatiana Maximova and Yakov Roizin and Micha Gutman",

note = "Funding Information: This work was supported by the MAGNET program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium “Emerging Dielectrics and Conductor Technologies”.",

year = "2004",

month = nov,

day = "10",

doi = "10.1016/j.jmatprotec.2004.04.062",

language = "אנגלית",

volume = "153-154",

pages = "179--184",

journal = "Journal of Materials Processing Technology",

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publisher = "Elsevier BV",

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AU - Avichail-Bibi, Rachel

AU - Fuks, David

AU - Kiv, Arnold

AU - Maximova, Tatiana

AU - Roizin, Yakov

AU - Gutman, Micha

N1 - Funding Information: This work was supported by the MAGNET program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium “Emerging Dielectrics and Conductor Technologies”.

PY - 2004/11/10

Y1 - 2004/11/10

N2 - A computer model for the dielectric trapping layer in the microFLASH® memory transistor is developed. Molecular dynamics method was used to design a cluster of atoms with dielectric properties and to perform computer simulation of the redistribution of the injected charges in the program/erase processes. The charge distributions obtained on the basis of proposed model are strongly influenced by Coulomb repulsion between the trapped charge carriers. This effect leads to non-Gaussian discrete space distribution of trapped charges and significantly influences the endurance of the memory device.

AB - A computer model for the dielectric trapping layer in the microFLASH® memory transistor is developed. Molecular dynamics method was used to design a cluster of atoms with dielectric properties and to perform computer simulation of the redistribution of the injected charges in the program/erase processes. The charge distributions obtained on the basis of proposed model are strongly influenced by Coulomb repulsion between the trapped charge carriers. This effect leads to non-Gaussian discrete space distribution of trapped charges and significantly influences the endurance of the memory device.

KW - Carriers migration

KW - Computer model of dielectric

KW - Coulomb correlation effects

KW - Molecular dynamics simulation

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JO - Journal of Materials Processing Technology

JF - Journal of Materials Processing Technology

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ER -

A model of the trapping media in microFLASH® memory cells

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