A model for the growth of cdte by metal organic chemical vapor deposition

Y. Nemirovsky, D. Goren, A. Ruzin

Research output: Contribution to journalArticlepeer-review

Abstract

A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe over a wide temperature range is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 380° C. The major features of the model are the observed two-step surface-controlled pyrolysis and surface saturation, leading initially to a growth rate that increases with the square root of the concentrations of the reacting species and subsequently to a decrease of the growth rate as the concentrations increase. At even higher concentrations, an additional increase of growth rate is observed and modeled.

Original languageEnglish
Pages (from-to)609-613
Number of pages5
JournalJournal of Electronic Materials
Volume20
Issue number10
DOIs
StatePublished - Oct 1991
Externally publishedYes

Keywords

  • CdTe
  • MOCVD
  • pyrolysis

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