A Low-Power 28-nm CMOS FD-SOI Reflection Amplifier for an Active F-Band Reflectarray

Naftali Landsberg, Eran Socher

Research output: Contribution to journalArticlepeer-review

Abstract

A new topology of a low-power F-band reflection amplifier for active reflectarrays is proposed and demonstrated using a CMOS fully depleted silicon-on-insulator 28-nm process. The design enables frequency response and center frequency tuning, as well as phase control of the reflected signal. The chip consumes a core area of only 90\times 80~\mu\text{m}^{2} and is incorporated into a 2\times 2 printed reflectarray antenna, implementing the first co-polarized active reflectarray. Such implementation enables, for the first time, active reflectarrays with dual polarization ability, which can be used for full-duplex links, as well as polarization diversity applications. Design considerations for a stable reflection amplifier, as well as measurement results of the reflection amplifier and reflectarray, are presented in this paper. Variable stable gain of 5-25 dB at the frequency range of 106-127 GHz was achieved, with noise figure of 10.5-11.7 dB. The total power consumption was 6-20 mW, depending on the chosen frequency response. An active antenna gain of 28 dBi was measured for the 2\times 2 reflectarray.

Original languageEnglish
Article number7920385
Pages (from-to)3910-3921
Number of pages12
JournalIEEE Transactions on Microwave Theory and Techniques
Volume65
Issue number10
DOIs
StatePublished - Oct 2017

Keywords

  • CMOS integrated circuits
  • microwave amplifiers
  • millimeter-wave circuits
  • phase shifters
  • phased arrays
  • reflector antennas
  • silicon-on-insulator technology

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