@inproceedings{3bddc38ddc384824806c5da184b52473,
title = "A fully integrated high gain 85-106 GHz packaged receiver module in CMOS 65 nm for FMCW radar",
abstract = "In this paper a fully integrated W-band receiver for FMCW radar in CMOS 65 nm technology is presented. The receiver topology is based on a 6-stage LNA, a Gilbert cell mixer, an IF buffer and an LO chain based on a x9 multiplying chain with a power amplifier. The receiver has a record peak conversion gain of +46 dB at 91 GHz and has a minimum NF of 7 dB for an IF of 40 MHz. A conversion gain higher than +30 dB was measured between 88 and 96 GHz. The circuit occupies an area of 1 mm2 and has a total DC power consumption of 300 mW. The chip is packaged in a connectorized module using wire-bonding with transition to WR10 and LO and IF filters.",
keywords = "CMOS, FMCW radar, Frequency Multiplier, LNA, Mixer, Mm wave, Power Amplifier, RF, Receiver, W-band",
author = "Samuel Jameson and Aviv Marks and Eran Socher",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; null ; Conference date: 04-06-2017 Through 09-06-2017",
year = "2017",
month = oct,
day = "4",
doi = "10.1109/MWSYM.2017.8058819",
language = "אנגלית",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1203--1206",
booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
address = "ארצות הברית",
}