A fully integrated high gain 85-106 GHz packaged receiver module in CMOS 65 nm for FMCW radar

Samuel Jameson, Aviv Marks, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

In this paper a fully integrated W-band receiver for FMCW radar in CMOS 65 nm technology is presented. The receiver topology is based on a 6-stage LNA, a Gilbert cell mixer, an IF buffer and an LO chain based on a x9 multiplying chain with a power amplifier. The receiver has a record peak conversion gain of +46 dB at 91 GHz and has a minimum NF of 7 dB for an IF of 40 MHz. A conversion gain higher than +30 dB was measured between 88 and 96 GHz. The circuit occupies an area of 1 mm2 and has a total DC power consumption of 300 mW. The chip is packaged in a connectorized module using wire-bonding with transition to WR10 and LO and IF filters.

Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium, IMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1203-1206
Number of pages4
ISBN (Electronic)9781509063604
DOIs
StatePublished - 4 Oct 2017
Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States
Duration: 4 Jun 20179 Jun 2017

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Country/TerritoryUnited States
CityHonololu
Period4/06/179/06/17

Keywords

  • CMOS
  • FMCW radar
  • Frequency Multiplier
  • LNA
  • Mixer
  • Mm wave
  • Power Amplifier
  • RF
  • Receiver
  • W-band

Fingerprint

Dive into the research topics of 'A fully integrated high gain 85-106 GHz packaged receiver module in CMOS 65 nm for FMCW radar'. Together they form a unique fingerprint.

Cite this