TY - JOUR
T1 - A dual-band millimeter-wave CMOS oscillator with left-handed resonator
AU - Yu, Alvin Hsing Ting
AU - Tam, Sai Wang
AU - Kim, Yanghyo
AU - Socher, Eran
AU - Hant, William
AU - Chang, Mau Chung Frank
AU - Itoh, Tatsuo
N1 - Funding Information:
Manuscript received August 09, 2009; revised January 22, 2010. First published March 29, 2010; current version published May 12, 2010. This work was supported by Sony and TAPO. A. H.-T. Yu, S.-W. Tam, Y. Kim, W. Hant, M.-C. F. Chang, and T. Itoh are with the Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095 USA (e-mail: [email protected]). E. Socher was with the Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095 USA. He is now with the School of Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TMTT.2010.2042854
PY - 2010/5
Y1 - 2010/5
N2 - A new technique using a left-handed (LH) resonator to generate a multiband millimeter-wave carrier signal is proposed in this paper. The LH resonator exhibits nonlinear dispersion characteristic, which enables uneven spacing between resonant frequencies.With stages of the LH unit cell, there are N/2 + 1 resonant frequencies from the nonlinear dispersion curve. Moreover, the band selection switches are not located in the signal path, which can, therefore, dramatically reduce the size of switches and improve the overall quality factor of the resonator. A dual-band millimeter-wave oscillator in digital 90-nm CMOS technology is implemented to demonstrate this new technique. Using a mode selection switch, the proposed oscillator operates at 21.3 and 55.3 GHz, respectively, with a total power consumption of 14 mW.
AB - A new technique using a left-handed (LH) resonator to generate a multiband millimeter-wave carrier signal is proposed in this paper. The LH resonator exhibits nonlinear dispersion characteristic, which enables uneven spacing between resonant frequencies.With stages of the LH unit cell, there are N/2 + 1 resonant frequencies from the nonlinear dispersion curve. Moreover, the band selection switches are not located in the signal path, which can, therefore, dramatically reduce the size of switches and improve the overall quality factor of the resonator. A dual-band millimeter-wave oscillator in digital 90-nm CMOS technology is implemented to demonstrate this new technique. Using a mode selection switch, the proposed oscillator operates at 21.3 and 55.3 GHz, respectively, with a total power consumption of 14 mW.
UR - http://www.scopus.com/inward/record.url?scp=77952429811&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2010.2042854
DO - 10.1109/TMTT.2010.2042854
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AN - SCOPUS:77952429811
SN - 0018-9480
VL - 58
SP - 1401
EP - 1409
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 5 PART 2
M1 - 5439909
ER -