A +6dBm 128GHz source module with full F-band waveguide package and wirebonded CMOS chip

Samuel Jameson, Bassam Khamaisi, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a packaged F-band transmitter in CMOS 65 nm technology is presented. The integrated circuit is based is based on a x9 active multiplying chain from Ku-band to F-band. The circuit was packaged and connectorized demonstrating the possibility of using wire-bonds around 130 GHz with low insertion loss. The microstrip-to-waveguide transition developed introduces insertion loss below 1 dB from 85 to 145 GHz. On-chip probing of the circuit showed a maximum output power of +8 dBm at 124 GHz with a 3 dB bandwidth of 9.8 % (117-129 GHz). The packaged circuit showed a maximum output power of +6 dBm at 128 GHz resulting in a package RF path insertion loss of 2 dB in average through the circuit -3 dB frequency bandwidth (117-133 GHz).

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - 9 Aug 2016
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: 22 May 201627 May 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Country/TerritoryUnited States
CitySan Francisco
Period22/05/1627/05/16

Keywords

  • CMOS
  • F-band
  • Frequency Multiplier
  • Package
  • Power Amplifier
  • RF
  • Transmitter
  • Wire-bond
  • X-band
  • mm wave

Fingerprint

Dive into the research topics of 'A +6dBm 128GHz source module with full F-band waveguide package and wirebonded CMOS chip'. Together they form a unique fingerprint.

Cite this