@inproceedings{43b7ceb4a2214c4fb302ac9e4c8bbe3c,
title = "A +6dBm 128GHz source module with full F-band waveguide package and wirebonded CMOS chip",
abstract = "In this paper, a packaged F-band transmitter in CMOS 65 nm technology is presented. The integrated circuit is based is based on a x9 active multiplying chain from Ku-band to F-band. The circuit was packaged and connectorized demonstrating the possibility of using wire-bonds around 130 GHz with low insertion loss. The microstrip-to-waveguide transition developed introduces insertion loss below 1 dB from 85 to 145 GHz. On-chip probing of the circuit showed a maximum output power of +8 dBm at 124 GHz with a 3 dB bandwidth of 9.8 % (117-129 GHz). The packaged circuit showed a maximum output power of +6 dBm at 128 GHz resulting in a package RF path insertion loss of 2 dB in average through the circuit -3 dB frequency bandwidth (117-133 GHz).",
keywords = "CMOS, F-band, Frequency Multiplier, Package, Power Amplifier, RF, Transmitter, Wire-bond, X-band, mm wave",
author = "Samuel Jameson and Bassam Khamaisi and Eran Socher",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",
year = "2016",
month = aug,
day = "9",
doi = "10.1109/MWSYM.2016.7540248",
language = "אנגלית",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",
address = "ארצות הברית",
}