A 67-110GHz CMOS to WR-10 waveguide transition using wirebonds and wideband microstrip launcher

Samuel Jameson, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and implemented. First, a CPW on Duroid to W-band aluminum waveguide is realized with a bandwidth of 49 % (67-110 GHz), an average insertion loss of -0.35 dB and reflection loss below -10 dB throughout the entire band. Then, wire-bonding the CMOS G-S-G pads to the Duroid CPW introduces an average 0.2 dB loss in the W-band. A 100 GHz RF signal of a 90nm CMOS VCO was transmitted successfully using this transition with less than 2 dB loss (which includes a 2-cm Duroid CPW line) compared to on chip probing measurement results.

Original languageEnglish
Title of host publication2014 IEEE MTT-S International Microwave Symposium, IMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479938698
DOIs
StatePublished - 2014
Event2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
Duration: 1 Jun 20146 Jun 2014

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Country/TerritoryUnited States
CityTampa, FL
Period1/06/146/06/14

Keywords

  • CMOS
  • CPW
  • W-band
  • package
  • transition
  • waveguide
  • wire-bond

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