TY - GEN
T1 - A 5.6 dB Noise-Figure X-Band to W-Band CMOS Frequency-Extender Receiver Frontend
AU - Elazar, Tal
AU - Socher, Eran
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This paper presents an 88-98 GHz receiver frontend with an X-band IF output and an X-band LO input. The receiver is designed to extend existing X-band systems to allow enhanced functionality. The implemented topology utilizes a linear differential low-noise amplifier (LNA) followed by a passive mixer for extended linearity. A X8 LO multiplication chain is integrated to allow the X-band input. A common-gate (CG) IF amplifier is placed after the passive mixer to allow the increased linearity of 'current mode' mixer operation. The receiver achieves < 8 dB noise figure (NF) in the 90-98 GHz range with a minimum value of 5.6 dB. The peak conversion gain is 17 dB with a 3-dB bandwidth (BW) of 8.5 GHz in a constant IF measurement. The maximum input-referred P1dB is -17 dBm with values > -22 dBm for different LO and IF frequencies. The receiver was fabricated in TSMC 65 nm bulk CMOS, occupies a core are of 0.15 μm2, and consumes 180 mW from a 1.2 V supply.
AB - This paper presents an 88-98 GHz receiver frontend with an X-band IF output and an X-band LO input. The receiver is designed to extend existing X-band systems to allow enhanced functionality. The implemented topology utilizes a linear differential low-noise amplifier (LNA) followed by a passive mixer for extended linearity. A X8 LO multiplication chain is integrated to allow the X-band input. A common-gate (CG) IF amplifier is placed after the passive mixer to allow the increased linearity of 'current mode' mixer operation. The receiver achieves < 8 dB noise figure (NF) in the 90-98 GHz range with a minimum value of 5.6 dB. The peak conversion gain is 17 dB with a 3-dB bandwidth (BW) of 8.5 GHz in a constant IF measurement. The maximum input-referred P1dB is -17 dBm with values > -22 dBm for different LO and IF frequencies. The receiver was fabricated in TSMC 65 nm bulk CMOS, occupies a core are of 0.15 μm2, and consumes 180 mW from a 1.2 V supply.
UR - http://www.scopus.com/inward/record.url?scp=85200868604&partnerID=8YFLogxK
U2 - 10.1109/IMS40175.2024.10600210
DO - 10.1109/IMS40175.2024.10600210
M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???
AN - SCOPUS:85200868604
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 831
EP - 834
BT - 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024
Y2 - 16 June 2024 through 21 June 2024
ER -