TY - GEN
T1 - A 300GHz wirelessly locked 2×3 array radiating 5.4dBm with 5.1% DC-to-RF efficiency in 65nm CMOS
AU - Jameson, Samuel
AU - Halpern, Eliezer
AU - Socher, Eran
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/2/23
Y1 - 2016/2/23
N2 - CMOS technology innovations over the last decades opened doors to the possibility of designing fully integrated systems in CMOS at THz frequencies. Small antenna sizes at THz frequencies make CMOS and silicon attractive for steerable 2D transmitter and receiver arrays. Previous works successfully showed THz-source arrays with the use of on-chip antennas [1-5]. However, it is still a challenge implementing such arrays that are frequency and phase locked, with significant radiated power and efficiency in standard CMOS without costly additions. In this work we propose a scalable radiating-transmitter approach in 65nm CMOS that achieves a radiated power of +5.4dBm at 0.3THz using only a 2×3 on-chip array, an EIRP of +22dBm and 5.1% of radiated-power-to-DC power efficiency.
AB - CMOS technology innovations over the last decades opened doors to the possibility of designing fully integrated systems in CMOS at THz frequencies. Small antenna sizes at THz frequencies make CMOS and silicon attractive for steerable 2D transmitter and receiver arrays. Previous works successfully showed THz-source arrays with the use of on-chip antennas [1-5]. However, it is still a challenge implementing such arrays that are frequency and phase locked, with significant radiated power and efficiency in standard CMOS without costly additions. In this work we propose a scalable radiating-transmitter approach in 65nm CMOS that achieves a radiated power of +5.4dBm at 0.3THz using only a 2×3 on-chip array, an EIRP of +22dBm and 5.1% of radiated-power-to-DC power efficiency.
UR - http://www.scopus.com/inward/record.url?scp=84962860692&partnerID=8YFLogxK
U2 - 10.1109/ISSCC.2016.7418050
DO - 10.1109/ISSCC.2016.7418050
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AN - SCOPUS:84962860692
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 348
EP - 349
BT - 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 63rd IEEE International Solid-State Circuits Conference, ISSCC 2016
Y2 - 31 January 2016 through 4 February 2016
ER -