A 280GHz +9dBm TRP dense 2D multi port radiator in 65nm CMOS

Nadav Buadana, Samuel Jameson, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A fully integrated and digitally controlled Multi-port dense 2D radiator is presented in this paper. Compared to conventional approach, the silicon die is here treated as a Dielectric Resonant Antenna (DRA). Each source consists of W-band Voltage Controlled Oscillator (VCO) connected to an exciting loop element to inject its 3rd harmonic to the DRA. Occupying only 1.4×1.4 mm2, the array elements are injection locked in frequency due to the tight coupling of the adjacent elements without the need of any locking signal. High resolution DACs are used to accurately set the frequency and a 3 wire SPI control interface is implemented. Fabricated in standard 65nm CMOS process, the array achieves an EIRP of 24 dBm, a record TRP of +9 dBm and power density of 4mW/mm2 with 1.8% efficiency at 280 GHz.

Original languageEnglish
Title of host publicationProceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
EditorsAndre Hanke Hanke, Steven Turner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages248-251
Number of pages4
ISBN (Print)9781538645451
DOIs
StatePublished - 7 Aug 2018
Event2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 - Philadelphia, United States
Duration: 10 Jun 201812 Jun 2018

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume2018-June
ISSN (Print)1529-2517

Conference

Conference2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
Country/TerritoryUnited States
CityPhiladelphia
Period10/06/1812/06/18

Keywords

  • Antenna Array
  • CMOS
  • Colpitts
  • DRA
  • Dielectric Resonant Antenna
  • Injection Lock
  • Multi-port
  • Oscillator
  • THz
  • VCO

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