@inproceedings{fa429cdb8b0d4dd18e35795ecee9a39d,
title = "A +27 dBm Psat 27 dB Gain W-Band Power Amplifier in 0.1 μm GaAs",
abstract = "In this work a W-Band power amplifier is presented in pmb 0.1 μm GaAs pHEMT. The amplifier is composed of pmb1 × 4 and pmb1 × 8 driving stages for high gain and of three successive pmb 1 × 8 power stages for high power. The stages were designed using a developed generic unconditionally stable unit cell. The output combiner was designed very efficiently with only 0.75 dB insertion loss to present each active device with mathbf Z opt. The amplifier has a small-signal gain above 25 dB and more than 26 dBm P sat over 93-102 GHz. Due to the chosen topology, the amplifier presents a rapid saturation achieving almost P sat after 6 dB compression. The PA demonstrates a peak output power of 27.3 dBm between 96-98 GHz. The measured PAE is around 12% over 93-102 GHz. It is the first power amplifier in GaAs demonstrating 0.5W of output power above 90GHz. The chip size is pmb 3 × 3 mm 2 including pads.",
keywords = "GaAs, MMIC, Power Amplifier, W-Band, pHEMT",
author = "Aviv Barabi and Noam Ross and Amity Wolfman and Ofer Shaham and Eran Socher",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = aug,
day = "17",
doi = "10.1109/MWSYM.2018.8439854",
language = "אנגלית",
isbn = "9781538650677",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1345--1347",
booktitle = "Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018",
address = "ארצות הברית",
}