A +27 dBm Psat 27 dB Gain W-Band Power Amplifier in 0.1 μm GaAs

Aviv Barabi, Noam Ross, Amity Wolfman, Ofer Shaham, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work a W-Band power amplifier is presented in pmb 0.1 μm GaAs pHEMT. The amplifier is composed of pmb1 × 4 and pmb1 × 8 driving stages for high gain and of three successive pmb 1 × 8 power stages for high power. The stages were designed using a developed generic unconditionally stable unit cell. The output combiner was designed very efficiently with only 0.75 dB insertion loss to present each active device with mathbf Z opt. The amplifier has a small-signal gain above 25 dB and more than 26 dBm P sat over 93-102 GHz. Due to the chosen topology, the amplifier presents a rapid saturation achieving almost P sat after 6 dB compression. The PA demonstrates a peak output power of 27.3 dBm between 96-98 GHz. The measured PAE is around 12% over 93-102 GHz. It is the first power amplifier in GaAs demonstrating 0.5W of output power above 90GHz. The chip size is pmb 3 × 3 mm 2 including pads.

Original languageEnglish
Title of host publicationProceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1345-1347
Number of pages3
ISBN (Print)9781538650677
DOIs
StatePublished - 17 Aug 2018
Event2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2018-June
ISSN (Print)0149-645X

Conference

Conference2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Country/TerritoryUnited States
CityPhiladelphia
Period10/06/1815/06/18

Keywords

  • GaAs
  • MMIC
  • Power Amplifier
  • W-Band
  • pHEMT

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