TY - GEN
T1 - A 234-248 GHz power efficient fundamental VCO using 32 nm CMOS SOI technology
AU - Landsberg, Naftali
AU - Socher, Eran
PY - 2013
Y1 - 2013
N2 - A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design was based on a Colpitts differential topology, where the gate capacitance of the device is used as a part of the inductor-capacitor tank for tuning. A peak output power level of 0.2 mW (-7 dBm) was achieved, while the total power consumption was 13 mW, reaching a record power efficiency of 1.5 %. A tuning bandwidth of 11 GHz was achieved by changing the gate bias level, while a total tuning range of 13.5 GHz was achieved by controlling both the gate and the drain bias. The design consumes a core area of only 50×80 μm2 and requires no buffer to drive the external 50 Ω termination.
AB - A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design was based on a Colpitts differential topology, where the gate capacitance of the device is used as a part of the inductor-capacitor tank for tuning. A peak output power level of 0.2 mW (-7 dBm) was achieved, while the total power consumption was 13 mW, reaching a record power efficiency of 1.5 %. A tuning bandwidth of 11 GHz was achieved by changing the gate bias level, while a total tuning range of 13.5 GHz was achieved by controlling both the gate and the drain bias. The design consumes a core area of only 50×80 μm2 and requires no buffer to drive the external 50 Ω termination.
KW - CMOSFET circuits
KW - Microwave oscillators
KW - Phase noise
KW - Silicon on insulator technology
KW - Submillimeter wave circuits
KW - Voltage-controlled oscillators
UR - http://www.scopus.com/inward/record.url?scp=84893254129&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2013.6697398
DO - 10.1109/MWSYM.2013.6697398
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AN - SCOPUS:84893254129
SN - 9781467361767
T3 - IEEE MTT-S International Microwave Symposium Digest
BT - 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
T2 - 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Y2 - 2 June 2013 through 7 June 2013
ER -