A 234-248 GHz power efficient fundamental VCO using 32 nm CMOS SOI technology

Naftali Landsberg, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design was based on a Colpitts differential topology, where the gate capacitance of the device is used as a part of the inductor-capacitor tank for tuning. A peak output power level of 0.2 mW (-7 dBm) was achieved, while the total power consumption was 13 mW, reaching a record power efficiency of 1.5 %. A tuning bandwidth of 11 GHz was achieved by changing the gate bias level, while a total tuning range of 13.5 GHz was achieved by controlling both the gate and the drain bias. The design consumes a core area of only 50×80 μm2 and requires no buffer to drive the external 50 Ω termination.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • CMOSFET circuits
  • Microwave oscillators
  • Phase noise
  • Silicon on insulator technology
  • Submillimeter wave circuits
  • Voltage-controlled oscillators

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