A 210-227 GHz transmitter with integrated on-chip antenna in 90 nm CMOS technology

Bassam Khamaisi, Samuel Jameson, Eran Socher

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of + 1.8dBm at 217 GHz and directivity of about +10dBi. The circuit consumes 128 mW of DC power and an area of 0.532.

Original languageEnglish
Article number6462007
Pages (from-to)141-150
Number of pages10
JournalIEEE Transactions on Terahertz Science and Technology
Volume3
Issue number2
DOIs
StatePublished - 2013

Keywords

  • CMOS
  • THz imaging
  • dipole antenna
  • millimeter-wave circuits
  • on-chip antenna
  • transmitter
  • voltage-controlled oscillator

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