A 159-169 GHz frequency source with 1.26 mW peak output power in 65 nm CMOS

Bassam Khamaisi, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper present a D-band signal source based on a 2nd harmonic generation of a differential Colpitts VCO that fabricated on 65 nm CMOS process. It covers a frequency range from 159 GHz to 169 GHz with a total tuning range of 5.8%. It provides -3.8 dBm at 163.5 GHz with a nominal supply voltage of 1.2 V while consuming a DC current of 25 mA and with power efficiency of 1.38%; increasing the supply voltage to 2 V with consuming a DC current of 44 mA achieves +1 dBm at 164.6 GHz with efficiency of 1.43%. The source performance in terms of output power, tuning range and efficiency is the best that reported on CMOS at this frequency range.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013
Subtitle of host publication43rd European Microwave Conference
Pages1507-1510
Number of pages4
StatePublished - 2013
Event2013 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013 - Nuremberg, Germany
Duration: 7 Oct 201310 Oct 2013

Publication series

NameEuropean Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference

Conference

Conference2013 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013
Country/TerritoryGermany
CityNuremberg
Period7/10/1310/10/13

Keywords

  • CMOS
  • Colpitts topology
  • D-Band
  • Millimeter waves
  • Voltage Controlled Oscillator (VCO)

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