A 154-165 GHz LNA and receiver in CMOS 65 nm technology

Jenia Elkind, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a fully differential G-band receiver design in CMOS 65 nm technology. First a low noise amplifier (LNA) was designed using neutralized, cross-coupled common source (CC CS) differential pair topology. The measured peak power gain was 36 dB and the minimum noise figure (NF) was 8.3 dB at around 158 GHz. These are the best gain and NF results in CMOS beyond 110 GHz. With exceptionally low DC power consumption of 34.8 mW, this LNA achieves a record gain efficiency of 1.03 dB/mW compared to any integrated circuit technology at this band. Due to the excellent performance of the LNA, a highly sensitive low noise G band receiver was also designed by adding a single transistor passive mixer at the LNA output. The measured receiver conversion gain was up to 20 dB at 158 GHz and the minimum NF was 8 dB. To the best knowledge of the authors, these are the best results in CMOS receivers beyond 110 GHz.

Original languageEnglish
Title of host publicationEuMIC 2016 - 11th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages393-396
Number of pages4
ISBN (Electronic)9782874870446
DOIs
StatePublished - 7 Dec 2016
Event11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom
Duration: 3 Oct 20164 Oct 2016

Publication series

NameEuMIC 2016 - 11th European Microwave Integrated Circuits Conference

Conference

Conference11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/TerritoryUnited Kingdom
CityLondon
Period3/10/164/10/16

Keywords

  • common-source
  • cross-coupling
  • low noise amplifier
  • millimiter wave
  • receiver

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