A 1-MHz 5-kV Power Supply Applying SiC Diodes and GaN HEMT Cascode MOSFETs in Soft Switching

Liran Katzir, Doron Shmilovitz

Research output: Contribution to journalArticlepeer-review

Abstract

A new high-voltage (HV) power supply based on the half-wave Cockcroft-Walton voltage multiplier topology is introduced. The proposed power supply operates at 1 MHz (at least ten times faster than conventional HV multipliers) and exhibits a very stable output voltage with minimal ripple (<0.1%). The proposed power supply has a high power density due to the high frequency and is also highly efficient (>90%). The high operation frequency and efficiency were facilitated by a critical design that applies softly switched wide-bandgap devices (silicon carbide diodes and gallium nitride high electron mobility transistor cascode MOSFETS) in full bridge cascaded by a voltage multiplier topology. Experimental evidence is provided from a prototype unit that raises the voltage from 300 V to 5 kV, with a 93% efficiency.

Original languageEnglish
Article number7552429
Pages (from-to)1474-1482
Number of pages9
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume4
Issue number4
DOIs
StatePublished - Dec 2016

Keywords

  • Gallium-nitride high electron mobility transistor (GaN HEMT)
  • MOSFET
  • high voltage (HV)
  • interleaving
  • silicon carbide (SiC) diode

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