Abstract
A new high-voltage (HV) power supply based on the half-wave Cockcroft-Walton voltage multiplier topology is introduced. The proposed power supply operates at 1 MHz (at least ten times faster than conventional HV multipliers) and exhibits a very stable output voltage with minimal ripple (<0.1%). The proposed power supply has a high power density due to the high frequency and is also highly efficient (>90%). The high operation frequency and efficiency were facilitated by a critical design that applies softly switched wide-bandgap devices (silicon carbide diodes and gallium nitride high electron mobility transistor cascode MOSFETS) in full bridge cascaded by a voltage multiplier topology. Experimental evidence is provided from a prototype unit that raises the voltage from 300 V to 5 kV, with a 93% efficiency.
Original language | English |
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Article number | 7552429 |
Pages (from-to) | 1474-1482 |
Number of pages | 9 |
Journal | IEEE Journal of Emerging and Selected Topics in Power Electronics |
Volume | 4 |
Issue number | 4 |
DOIs | |
State | Published - Dec 2016 |
Keywords
- Gallium-nitride high electron mobility transistor (GaN HEMT)
- MOSFET
- high voltage (HV)
- interleaving
- silicon carbide (SiC) diode