A 0.4THz Radiating On-chip Locked Source in 65nm CMOS

Firass Mustafa, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper a Y-band THz radiating CMOS source in the is presented. The source is based on a differential buffer- less Colpitts D-band VCO, which is tuned by controlling its gate- source capacitance through its transistor drain-gate voltage. The transistor drains are directly coupled to an on-chip loop antenna that chokes the fundamental signal while efficiently radiating the 3rd harmonic generated by the VCO transistor non-linearity. The source is locked using an external D-band source that radiates the CMOS chip and injection locks the source through its fundamental oscillation. The source can be tuned in a wide frequency range of 405 to 421 GHz with peak total output power of -15dBm (DC to THz radiated power efficiency of 0.1%), EIRP of -6 dBm and DC to EIRP power efficiency of 1.1%. This concept enables simple and cost-effective locked CMOS THz source arrays.

Original languageEnglish
Title of host publication2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages181-184
Number of pages4
ISBN (Electronic)9780738146720
DOIs
StatePublished - 2021
Event2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2021 - Tel Aviv, Israel
Duration: 1 Nov 20213 Nov 2021

Publication series

Name2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2021

Conference

Conference2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2021
Country/TerritoryIsrael
CityTel Aviv
Period1/11/213/11/21

Keywords

  • Antenna
  • CMOS
  • D-band
  • Injection locking
  • Source
  • THz
  • VCO
  • Wireless
  • Y-band

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