Abstract
In this paper, a × 27 radiating active frequency multiplier chain at 288 GHz is presented. The circuit output is connected to a single on-chip ring antenna radiating a record high total radiated power of 1 mW for a DC power consumption of 284 mW at 288 GHz. The circuit has a-3dB bandwidth of 15 GHz (277-292 GHz), an EIRP of +10.2dBm and a record radiated DC-to-RF efficiency of 0.34% for a radiating frequency multiplying chain, enabled by direct drain transistor to on-chip antenna connection. The antenna has a measured directivity of +10.2dBi at 288 GHz. Realized in a 65-nm technology, this is the first CMOS integrated locked radiating source to achieve 1 mW of radiated power above 0.2 THz.
Original language | English |
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Article number | 7123677 |
Pages (from-to) | 645-648 |
Number of pages | 4 |
Journal | IEEE Transactions on Terahertz Science and Technology |
Volume | 5 |
Issue number | 4 |
DOIs | |
State | Published - 1 Jul 2015 |
Keywords
- Antenna
- CMOS
- J-band
- THz
- X-band
- frequency multiplier
- mm wave
- power amplifier
- ring
- source
- sub-mm wave