A 0.18μm CMOS low-power radiation sensor for UWB wireless transmission

M. Crepaldi, D. Demarchi, A. Gabrielli*, A. Khan, E. Pikhay, Y. Roizin, G. Villani, Z. Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The paper describes the design of a floating gate MOS sensor embedded in a readout CMOS element, used as a radiation monitor. A maximum sensitivity of 1 mV/rad is estimated within an absorbed dose range from 1 to 10 krad. The paper shows in particular the design of a microelectronic circuit that includes the floating gate sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype of the circuit has recently been simulated, fabricated and tested exploiting a commercial 180 nm, 4 metal CMOS technology. Some simulation results are presented along with a measurement of the readout circuit response to an input voltage swing. Given the small estimated area of the complete chip prototype, that is less than 1 mm2, the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements or radiation level in High-Energy Physics experiments.

Original languageEnglish
Article numberC12019
JournalJournal of Instrumentation
Volume7
Issue number12
DOIs
StatePublished - Dec 2012
Externally publishedYes

Keywords

  • Analogue electronic circuits
  • Microdosimetry and nanodosimetry
  • Pixelated detectors and associated VLSI electronics
  • VLSI circuits

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