52-75 GHz wideband low-noise amplifier in 90nm CMOS technology

R. Sananes, E. Socher

Research output: Contribution to journalArticlepeer-review

Abstract

A three-stage single-ended low-noise amplifier covering almost the entire V-band is presented. The design employs three cascade single-ended stages with pi-sections for wideband interstage matching and source degeneration at the first stage. The amplifier achieves a peak gain of 14dB and minimum noise figure of 4.8dB. A record 3dB bandwidth of 37 is achieved with power consumption of 32mW and core silicon area of 0.065mm 2 in 90nm CMOS technology.

Original languageEnglish
Pages (from-to)71-72
Number of pages2
JournalElectronics Letters
Volume48
Issue number2
DOIs
StatePublished - 19 Jan 2012

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