Abstract
A large aperture ring laser having a diffraction limited output measuring 0.2° × 0.2° is described. The design uses angled incidence onto monolithic gratings for feedback and mode selectivity. Devices of this design have exhibited threshold current density less than 300 A/cm2 and over 500 mW of single frequency output power.
| Original language | English |
|---|---|
| Pages (from-to) | 1477-1478 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 28 |
| Issue number | 16 |
| DOIs | |
| State | Published - 30 Jul 1992 |
| Externally published | Yes |
Keywords
- Lasers
- Semiconductor lasers
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