240 GHz and 272 GHz fundamental VCOs using 32 nm CMOS technology

Naftali Landsberg, Eran Socher

Research output: Contribution to journalArticlepeer-review

Abstract

Two fundamental oscillators, a 240 GHz and a 272 GHz are demonstrated using the IBM CMOS 32 nm process. The design of both oscillators was based on a Colpitts differential topology, where parasitic capacitances of the device are used as a part of the inductor-capacitor tank. The design process and consideration is discussed, as well as the measurement procedures. A simplified model predicting the output power of the voltage-controlled oscillator (VCO) and its phase noise is presented, and comparison to the measured results is discussed. An output power level of 0.2 mW (-7 dBm) was realized for the 240 GHz oscillator, with total power consumption of 13.3 mW and a total tuning range of 13.5 GHz achieved by changing both the gate and drain bias. The 272 GHz oscillator achieved a lower power level of about -22 dBm, with a total power consumption of only 7 mW.

Original languageEnglish
Article number6670796
Pages (from-to)4461-4471
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume61
Issue number12
DOIs
StatePublished - Dec 2013

Keywords

  • CMOSFET circuits
  • Microwave oscillators
  • Phase noise
  • Silicon on insulator technology
  • Submillimeter wave circuits
  • Voltage-controlled oscillators

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