[110] Tunneling under applied magnetic fields into Y1Ba2Cu3O7-δ: Possible evidence for a field-induced idxy gap component

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Abstract

Tunneling characteristics along the [110] direction were measured in Y1Ba2Cu3O7-δ\Insulator\In junctions as a function of the magnetic field H, applied parallel to the plane of the junction, along the c-axis. The junctions exhibit a Zero Bias Conductance Peak (ZBCP) which splits as H1/2. The data is in better agreement with a field-induced idxy gap component than with a Doppler-shift-induced field splitting.

Original languageEnglish
Pages (from-to)116-121
Number of pages6
JournalEurophysics Letters
Volume51
Issue number1
DOIs
StatePublished - 1 Jul 2000

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